From a Co-Mo precursor to 1H and 1T Co-promoted MoS2: exploring the effects of gas pressure

The work presented in this paper makes use of the high-pressure situ imaging capabilities ReactorSTM to demonstrate that single layer 1T Co-promoted MoS 2 can be directly synthesized without any intercalating agents by applying highly reducing conditions during growth. In work, we have sulfided a CoMo nanoparticle precursor supported on Au(111) using H :CH 3 SH gas mixture at 1 bar and imaged crystallization process ReactorSTM. We observed low temperatures (∼500 K), an intermediate disordered CoMoS x phase is formed which crystallizes into metallic single-layer slabs close 600 K. also show semiconducting 1H under sulfur-rich vacuum physical vapor deposition process, do not transform their counterparts when exposed same pressures temperatures, thus, demonstrating importance for inducing formation metastable phase. XPS spectra indicate sulfur deficiency up 11% top S, suggesting likely role vacancies